The Voc scan on this mono-crystalline cell clearly shows the influence of the absence of the BSF below the silver rear busbars: the Voc's measured at the corresponding positions on the front side are lower than on the rest of the cell. Some edge shunts can be seen on the upper left edge and the upper right edge. Note that the Voc is quite constant when compared with the multi-crystalline cell on the right. This is probably due to the absence of grain boundaries in the mono material.

This multi-crystalline cell shows a different picture. The Voc's differ much more than on the mono-crystalline cell because this material contains more grain boundaries and defects; two cracks show up on locations that were not visible on the cell. On the right hand side of the wafer there is an edge shunt.